Frontview RENA InEtchSide high throughput rear side etching

Single Side Oxide Etching

High throughput next generation rear side etching

The RENA InEtchSide automated processing equipment is designed for ultra-high throughput removal of silicon oxide layers and doped glasses (e.g. PSG or BSG). The proven and optimized, patented single side etching process ensures lowest chemical front side attack. This is used in the fabrication of high efficiency solar cell concepts, like IBC, PERC, TOPCon and others. The tool is based upon the RENA NIAK 4 inline platform.

Features and Benefits

  • Fully automated wet chemical single side etching - Inline on 10-12 lanes
  • Single side removal of silicon oxide (SiO2), doped glasses (PSG/BSG)
  • RENA Fast Etch Technology: processing at T > RT possible
  • Uses HF for single side processing (additional chemistry optional, e.g. HCl or BHF)
  • Integrated rinsing and drying of wafers
  • Long bath lifetime due to feed-andbleed function
  • Lowest breakage rate in industry
  • Based on latest RENA NIAK 4 inline processing platform
  • High uptime
  • Easy maintenance

Options

  • MES interface (SECS/GEM)
  • Media cabinet for chemical supply
  • Waste pump station for chemical drain/waste water
  • Sensors for process control (e.g. pH, conductivity)

Areas of Application

  • Rear side oxide etching for high efficiency solar cells
  • Single side SiO2, PSG- or BSG removal
  • Fully compatible with PERC, IBC and TOPCon technology
Andreas Eigeldinger