Single Side Oxide Etching

The RENA InEtchSide automated processing equipment is designed for the single side removal of silicon oxide layers and doped glasses (e.g. PSG or BSG). This can be used in the fabrication of high efficiency cell concepts, e.g. for single side oxide etching using hydrofluoric acid (HF). It is based upon the RENA NIAK inline platform.

Features and Benefits

  • Fully automated wet chemical single side etching in an inline type process on 5 lanes
  • Single side removal of silicon oxide (SiO2), doped glasses (PSG/BSG)
  • Uses HF for single side processing (additional chemistry optional, e.g. H2SO4 or BHF)
  • Integrated rinsing and drying of wafer
  • Throughput up to 5000 wafer/hour
  • Compatible with M0, M1, M2 and M4 wafer size
  • Long bath lifetime due to feed-and-bleed function
  • Accurate dosing system for constant bath composition
  • Uses O-ring free roller design
  • Lowest breakage rate in industry
  • Based on RENA NIAK inline processing platform
  • High uptime
  • Easy maintenance


  • MES interface (SECS/GEM)
  • Media cabinet for chemical supply
  • Waste pump station for chemical drain / waste water
  • Sensors for process control (e.g. pH, conductivity)
VP Sales
Dr.-Ing. Ulrich Jäger
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