High Throughput Single Side Oxide Etching

Improved Throughput Next Generation Rear Side Etching

The RENA InEtchSide 4+ automated processing equipment is designed for removal of silicon oxide layers and doped glasses (e.g. PSG or BSG). The ultra-high throughput on up to 14 lanes provide highest yield and mark a significant improvement to it`s predecessor. The proven and optimized, patented single side etching process (RFL - Water Capping) ensures lowest chemical front side attack. The tool used in IBC, TOPCon or other high efficiency solar cell concept manufacturing. Ideally combined with the RENA BatchEtch and RENA BatchPolyClean series the cluster handles all known wafer formats.

Features and Benefits

  • Fully automated wet chemical single side etching - Inline on 12-14 lanes
  • Single side removal of silicon oxide (SiO2), doped glasses (PSG/BSG)
  • RENA Fast Etch Technology: processing at T > RT possible
  • single side processing with HF (additional chemistry optional)
  • Integrated rinsing and drying of wafers
  • Long bath lifetime due to feed-and bleed function
  • Lowest breakage rate in industry
  • Based on latest RENA NIAK 4+ inline processing platform
  • High uptime
  • Easy maintenance

Options

  • MES interface (SECS/GEM)
  • Media cabinet for chemical supply
  • Waste pump station for chemical drain/waste water
  • Sensors for process control (e.g. pH, conductivity)

Areas of Application

  • Rear side oxide etching for high efficiency solar cells
  • Single side SiO2, PSG- or BSG removal
  • Fully compatible with IBC, TOPCon & PERC technology
Michael Vees Sales Director Solar
Sales Director Solar
Michael Vees